PICOPROBEÆ MODEL 18C & PICOPROBEÆ MODEL 19C combine the most advanced MOS and bipolar technologies with special, low capacitance packaging techniques to achieve truly remarkable electronic measurement capabilities. While being manufactured each instrument is individually optimized for the best possible performance. The extremely low input capacitance and almost negligible input leakage current permits the direct probing of even the most sensitive MOS dynamic nodes. At the same time, the full dc capability of the probe coupled with the high speed capability
permits the full characterization of even the fastest circuits.
The 20 micron tungsten probe wire is tapered to an extremely fine point to allow the probing of lines less than 1 micron. The fine probe wire flexes when in contact with the circuit, so that damage to the circuit and probe point is minimized. Also the flexing tends to keep the probe point in contact with the circuit even in the presence of probe table vibrations. MODEL 18C & MODEL 19C probe tips are also available with a 50 micron tungsten probe wire sharpened to approximately 3 microns.
The circuitry located in the MODEL 18C & MODEL 19C PicoprobeÆ body is very rugged; however, the unprotected MOS input in each probe tip is subject to destruction by electrostatic discharge. Should the probe tip become damaged, it can easily be removed and replaced.