- If high electric field is applied to the IC in the high temperature environment, it may fail to meet catalog specifications such as Icc, Input leakage current, AC parameters or functional specifications.
- This failure is called Electro-Thermally Induced Gate Leakage failure.
- If this failure is detected, the device is categorized as NG, but it may typically recover by baking (4 hours at 125℃, or 2 hours at 150℃).
- This system applies electric field in the high temperature environment that meets AEC-Q100-006 REV-C.
- Manual test Model 6900M and Automatic test Model 6900A are available.