The XFS-R 3-1 near-field probe is designed for direct high-resolution measurements of RF magnetic fields on an assembly, e.g. around the pins and IC cases, conducting paths, decoupling capacitor, and EMC components.
The XFS-R 3-1 H-field probe is suitable for measurements close to the components with high magnetic field strength. It has a current attenuating sheath and, therefore, is electrically shielded. It can be connected to a spectrum analyzer or an oscilloscope with a 50 Ω input. The H-field probe has an internal terminating resistance.